zse.mi-condu.cko'i l/ , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon npn power transistor 2SC1514 description ? high collector-emitter breakdown voltage- : v(br)ceo= 300v(min) ? good linearity of hfe ? low saturation voltage applications ? designed for use in high frequency high voltage amplifier and tv viedo output applications. absolute maximum ratings(ta=25v) symbol vcbo vceo vebo ic pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector power dissipation @ tc=25c collector power dissipation @ ta=25c junction temperature storage temperature range value 300 300 5 0.1 10 1.25 150 -40-150 unit v v v a w r r ? ^ pin 1. emitter 2. collector i 3. base 1 2 2- to-1 26 package * r-b-i i.-f i a r ? i | : h - v d-* q t 175. _ l"^ f 1 g ?? i * * ? 3 dim a b c d f g h j k 0 r v ; o :t v ? ? j ~?j< t - a i i k ~~* id mm min 10,70 7.70 2.60 0.66 3.10 4.48 2.00 1.35 16.10 3.70 0.40 1.17 max 10.90 7.90 2.80 0.86 3.30 4.68 2.20 1.55 16.30 3.90 o.?0 1.37 r-j *-r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by n.i semi-conduclors is believed to be both accurate and reliable at the time of going to press. i lone\er, n.i seini-condiietors assumes no responsibility for an\s or omissions discovered in its use. n.i seiui-conduclors cncouraj>es customers to verify dial datasheets are current before placing orders. semi-conductors
silicon npn power transistor 2SC1514 electrical characteristics tc=25"c unless otherwise specified symbol v(br)cbo v(br)ceo v(br)ebo vce(sat) iceo hfe fl cob parameter collector-base breakdown voltage ?.. collector-emitter breakdown voltage emitter-base breakdown wage collector-emitter saturation voltage collector cutoff current dc current gain current-gain ? bandwidth product output capacitance conditions lc=10ua; ie=0 lc= 1ma; rbe= ? |e=10ua;lc=0 lc= 20ma; |b= 2ma vce= 250v; rse= ? lc= 20ma ; vce= 20v lc= 20ma ; vce= 20v le=0;vcb=20v,ftest=1mhz min 300 300 5 30 typ. * 80 max 1.5 1 200 4 unit v v v v ua mhz pf
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